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IRF7380TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 80V 3.6A 8-SOIC
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Inventory: 4273
Minimum: 1
Total Price: USD $0.4
Unit Price: USD $0.397677
≥1 USD $0.397677
≥10 USD $0.375165
≥100 USD $0.353934
≥500 USD $0.3339
≥1000 USD $0.315
≥3000 USD $0.297171

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Dimensions

Height 1.4986mm
Length 4.9784mm
Width 3.9878mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 73MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 80V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3.6A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRF7380PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 9 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 73m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 10 ns
Fall Time (Typ) 17 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 3.6A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Avalanche Energy Rating (Eas) 75 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 4 V

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