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RoHS
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Package 18-WFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description P-CHANNEL POWER MOSFET
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Inventory: 90044
Minimum: 1
Total Price: USD $1.2
Unit Price: USD $1.2012
≥1 USD $1.2012

Technical Details

Physical

Mounting Type Surface Mount
Package / Case 18-WFBGA
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e2
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 18
Terminal Finish TIN SILVER
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 18
JESD-30 Code R-PBGA-B18
Qualification Status COMMERCIAL
Number of Elements 2
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2.1W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.5A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 6.5A
Drain-source On Resistance-Max 0.028Ohm
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

RoHS Status Non-RoHS Compliant
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