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BSC0993NDATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N-CH 30V 8TISON
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Inventory: 5178
Minimum: 1
Total Price: USD $0.39
Unit Price: USD $0.388676
≥1 USD $0.388676
≥10 USD $0.377244
≥100 USD $0.365813
≥500 USD $0.351523

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N6
Number of Elements 2
Configuration SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 17A Ta
Drain Current-Max (Abs) (ID) 17A
Drain-source On Resistance-Max 0.007Ohm
Pulsed Drain Current-Max (IDM) 68A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 14 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

RoHS Status ROHS3 Compliant
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