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RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC
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Inventory: 80103
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.087668
≥1 USD $0.087668
≥10 USD $0.085089
≥100 USD $0.082511
≥500 USD $0.079288

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Dimensions

Height 1.4986mm
Length 4.9784mm
Width 3.9878mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number IRF7905PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21.8m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.8A 8.9A
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 4.5V
Fall Time (Typ) 3.4 ns
Continuous Drain Current (ID) 8.9A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0171Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 71A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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