Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number IRF7905PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21.8m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.8A 8.9A
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 4.5V
Fall Time (Typ) 3.4 ns
Continuous Drain Current (ID) 8.9A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0171Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 71A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate