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IPG20N04S408ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N-Channel 40V MOSFET
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Inventory: 14203
Minimum: 1
Total Price: USD $0.35
Unit Price: USD $0.345778
≥1 USD $0.345778
≥10 USD $0.335608
≥100 USD $0.325438
≥500 USD $0.312726

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2010
Series OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 65W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 7.6m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 2940pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.0076Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 230 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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