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NTMFD4C88NT1G

Rochester Electronics, LLC
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description POWER FIELD-EFFECT TRANSISTOR
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Inventory: 6025
Minimum: 1
Total Price: USD $2.35
Unit Price: USD $2.349113
≥1 USD $2.349113
≥10 USD $1.92717
≥100 USD $1.86732
≥500 USD $1.80747
≥1000 USD $1.746623

Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6)

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.1W
FET Type 2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs 5.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1252pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11.7A 14.2A
Gate Charge (Qg) (Max) @ Vgs 22.2nC @ 10V
Drain to Source Voltage (Vdss) 30V
FET Feature Standard

Alternative Model

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