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BSG0811NDATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 25V 19A/41A 8TISON
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Inventory: 38376
Minimum: 1
Total Price: USD $1.27
Unit Price: USD $1.26882
≥1 USD $1.26882
≥10 USD $1.04139
≥100 USD $1.008473
≥500 USD $0.976553
≥1000 USD $0.943635

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Max Power Dissipation 2.5W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N7
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Power - Max 2.5W
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 12V
Current - Continuous Drain (Id) @ 25°C 19A 41A
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Continuous Drain Current (ID) 41A
Max Dual Supply Voltage 25V
Drain Current-Max (Abs) (ID) 19A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 30 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 4.5V Drive

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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