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NTL4502NT1

Rochester Electronics, LLC
RoHS
/
Package 16-PowerQFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description N-CHANNEL POWER MOSFET
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 16-PowerQFN
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16
Terminal Finish TIN LEAD
Terminal Position QUAD
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 16
JESD-30 Code S-XQCC-N16
Qualification Status COMMERCIAL
Number of Elements 4
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 1.7W
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1605pF @ 20V
Current - Continuous Drain (Id) @ 25°C 11.4A
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Drain to Source Voltage (Vdss) 24V
Drain Current-Max (Abs) (ID) 11.4A
Drain-source On Resistance-Max 0.013Ohm
Pulsed Drain Current-Max (IDM) 32A
DS Breakdown Voltage-Min 24V
Avalanche Energy Rating (Eas) 80 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Alternative Model

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