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BSM400D12P2G003

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package Module
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description SILICON CARBIDE POWER MODULE. B
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Inventory: 87
Minimum: 1
Total Price: USD $1980
Unit Price: USD $1980.00264
≥1 USD $1980.00264

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -40°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 2450W Tc
FET Type 2 N-Channel (Half Bridge)
Vgs(th) (Max) @ Id 4V @ 85mA
Input Capacitance (Ciss) (Max) @ Vds 38000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 400A Tc
Drain to Source Voltage (Vdss) 1200V 1.2kV
FET Feature Silicon Carbide (SiC)

Alternative Model

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