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SQJ912AEP-T1_GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 40V 30A PPAK SO-8
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Inventory: 1233
Minimum: 1
Total Price: USD $0.59
Unit Price: USD $0.58996
≥1 USD $0.58996
≥10 USD $0.572608
≥100 USD $0.555256
≥500 USD $0.533566

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8 Dual
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101, TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 48W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G4
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 48W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 9.3m Ω @ 9.7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1835pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 40V
Continuous Drain Current (ID) 30A
Drain-source On Resistance-Max 0.0093Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 34 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

RoHS Status ROHS3 Compliant
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