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IPG20N10S4L22AATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 100V 20A TDSON-8
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Inventory: 21893
Minimum: 1
Total Price: USD $0.61
Unit Price: USD $0.605733
≥1 USD $0.605733
≥10 USD $0.587917
≥100 USD $0.570102
≥500 USD $0.547832

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 60W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5 ns
Power - Max 60W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 22m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 25μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 3ns
Fall Time (Typ) 18 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.022Ohm
Avalanche Energy Rating (Eas) 130 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

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