Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Operating Mode ENHANCEMENT MODE
Power - Max 350mW
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 230m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 16V
Current - Continuous Drain (Id) @ 25°C 650mA
Gate Charge (Qg) (Max) @ Vgs 1.58nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 0.65A
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.35W
FET Feature Logic Level Gate