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PMCXB900UEZ

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package 6-XFDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description PMCXB900UE - 20 V, complementary N/P-channel Trench MOSFET
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Inventory: 1684578
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.07392
≥1 USD $0.07392

Technical Details

Supply Chain

Factory Lead Time 4 Weeks

Physical

Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 265mW
Terminal Position DUAL
Pin Count 6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N and P-Channel Complementary
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 620m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 21.3pF @ 10V
Current - Continuous Drain (Id) @ 25°C 600mA 500mA
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 8V
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
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