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FDC6303N

ON Semiconductor
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET N-CH 25V 0.68A 6-Pin SuperSOT T/R
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Inventory: 2285
Minimum: 1
Total Price: USD $0.25
Unit Price: USD $0.247097
≥1 USD $0.247097
≥10 USD $0.233111
≥100 USD $0.219912
≥500 USD $0.207459
≥1000 USD $0.19572

Technical Details

Supply Chain

Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 450mOhm
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Max Power Dissipation 900mW
Terminal Form GULL WING
Current Rating 680mA
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 900mW
Turn On Delay Time 3 ns
Power - Max 700mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Rise Time 8.5 ns
Fall Time (Typ) 13 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 680mA
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 800 mV

Dimensions

Height 1.1mm
Length 3mm
Width 1.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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