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FDY4000CZ

ON Semiconductor
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V SC89-6
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Inventory: 46097
Minimum: 1
Total Price: USD $5.64
Unit Price: USD $5.638868
≥1 USD $5.638868
≥10 USD $4.626405
≥100 USD $4.481768
≥500 USD $4.33713
≥1000 USD $4.192493

Technical Details

Supply Chain

Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Dimensions

Height 500μm
Length 1.6mm
Width 1.2mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 700MOhm
Additional Feature ESD PROTECTED
Subcategory Other Transistors
Voltage - Rated DC 600V
Max Power Dissipation 625mW
Terminal Form FLAT
Current Rating 600mA
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 625mW
Power - Max 446mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 700m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 10V
Current - Continuous Drain (Id) @ 25°C 600mA 350mA
Gate Charge (Qg) (Max) @ Vgs 1.1nC @ 4.5V
Rise Time 13 ns
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 13 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 600mA
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 32mg
Transistor Element Material SILICON

Alternative Model

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