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FDG6301N-F085

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 25V 0.22A SC70-6
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Inventory: 5960
Minimum: 1
Total Price: USD $0.33
Unit Price: USD $0.332395
≥1 USD $0.332395
≥200 USD $0.128622
≥500 USD $0.128622
≥1000 USD $0.12194

Technical Details

Supply Chain

Factory Lead Time 42 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Max Power Dissipation 300mW
Terminal Form GULL WING
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Rise Time 4.5ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 3.2 ns
Turn-Off Delay Time 4 ns
Continuous Drain Current (ID) 220mA
Threshold Voltage 850mV
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 4Ohm
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate

Dimensions

Height 1.1mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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