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PMDPB30XN,115

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package 6-UDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description PMDPB30XN Series 20 V 40 mOhm 490 mW Dual N-Channel TrenchMOS FET - DFN-2020-6
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Inventory: 7706
Minimum: 1
Total Price: USD $0.48
Unit Price: USD $0.48048
≥1 USD $0.48048
≥10 USD $0.375144
≥100 USD $0.224994
≥500 USD $0.208343
≥1000 USD $0.141677

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 8
Supplier Device Package 6-HUSON-EP (2x2)

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 490mW
Number of Channels 2
Element Configuration Dual
Turn On Delay Time 40 ns
Power - Max 490mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A
Gate Charge (Qg) (Max) @ Vgs 21.7nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 4 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 650mV
Input Capacitance 660pF
FET Feature Logic Level Gate
Drain to Source Resistance 32mOhm
Rds On Max 40 mΩ
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