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FDC3601N

ON Semiconductor
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description ON SEMICONDUCTOR - FDC3601N - Dual MOSFET, Dual N Channel, 1 A, 100 V, 0.5 ohm, 10 V, 2.6 V
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Inventory: 77390
Minimum: 1
Total Price: USD $1.13
Unit Price: USD $1.128173
≥1 USD $1.128173
≥10 USD $0.92568
≥100 USD $0.896753
≥500 USD $0.867825
≥1000 USD $0.838898
≥3000 USD $0.752115

Technical Details

Supply Chain

Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON

Dimensions

Height 1mm
Length 3mm
Width 1.7mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 500MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Max Power Dissipation 960mW
Terminal Form GULL WING
Current Rating 1A
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 8 ns
Power - Max 700mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 153pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Rise Time 4 ns
Fall Time (Typ) 4 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 1A
Threshold Voltage 2.6V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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