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CSD75208W1015

Texas Instruments
RoHS
RoHS RoHS compliant
Package 6-UFBGA, DSBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description TEXAS INSTRUMENTS CSD75208W1015Dual MOSFET, Dual P Channel, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
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Inventory: 12322
Minimum: 1
Total Price: USD $0.5
Unit Price: USD $0.49896
≥1 USD $0.49896
≥10 USD $0.422268
≥100 USD $0.293555
≥500 USD $0.229226
≥1000 USD $0.186325

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA, DSBGA
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 750mW
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD75208
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9 ns
FET Type 2 P-Channel (Dual) Common Source
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 68m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.6A
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Rise Time 5ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) -1.6A
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) -6V
Drain-source On Resistance-Max 0.15Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 10 pF

Dimensions

Height 1mm
Length 1.5mm
Width 1.8mm
Thickness 2mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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