IRFP064NPBF

Infineon Technologies

RoHS

RoHS compliant

Package TO-247-3

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description In a Tube of 25, N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBF

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Inventory: 995

Minimum: 1

Total Price: USD $0.24

Unit Price: USD $0.238143

≥1 USD $0.238143

≥10 USD $0.231139

≥100 USD $0.224135

≥500 USD $0.215379

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-247-3

Number of Pins 3

Transistor Element Material SILICON

Dimensions

Height 24.99mm

Length 15.875mm

Width 5.3mm

Compliance

Radiation Hardening No

REACH SVHC No SVHC

RoHS Status ROHS3 Compliant

Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ

Packaging Tube

Published 1997

Series HEXFET?

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

Termination Through Hole

ECCN Code EAR99

Resistance 8MOhm

Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Subcategory FET General Purpose Power

Voltage - Rated DC 55V

Technology MOSFET (Metal Oxide)

Current Rating 110A

Lead Pitch 5.45mm

Number of Elements 1

Number of Channels 1

Power Dissipation-Max 200W Tc

Element Configuration Single

Operating Mode ENHANCEMENT MODE

Power Dissipation 150W

Case Connection DRAIN

Turn On Delay Time 14 ns

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 8m Ω @ 59A, 10V

Vgs(th) (Max) @ Id 4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V

Current - Continuous Drain (Id) @ 25°C 110A Tc

Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V

Rise Time 100 ns

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±20V

Fall Time (Typ) 70 ns

Turn-Off Delay Time 43 ns

Continuous Drain Current (ID) 110A

Threshold Voltage 4V

JEDEC-95 Code TO-247AC

Gate to Source Voltage (Vgs) 20V

Drain Current-Max (Abs) (ID) 98A

Drain to Source Breakdown Voltage 55V

Dual Supply Voltage 55V

Avalanche Energy Rating (Eas) 480 mJ

Recovery Time 170 ns

Max Junction Temperature (Tj) 175°C

Nominal Vgs 4 V

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