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IRFB4110PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 3.7 Milliohms; ID 180A; TO-220AB; PD 370W
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Inventory: 199043
Minimum: 1
Total Price: USD $1.13
Unit Price: USD $1.128173
≥1 USD $1.128173
≥10 USD $0.92568
≥100 USD $0.896753
≥500 USD $0.867825
≥1000 USD $0.838898

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 180A
Number of Elements 1
Power Dissipation-Max 370W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 370W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9620pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Rise Time 67 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 88 ns
Turn-Off Delay Time 78 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0045Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 670A
Dual Supply Voltage 100V
Recovery Time 75 ns
Nominal Vgs 4 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 16.51mm
Length 10.66mm
Width 4.826mm

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