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CSD19535KTTT

Texas Instruments
RoHS
RoHS RoHS compliant
Package TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 200A TO263
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Inventory: 8655
Minimum: 1
Total Price: USD $3.92
Unit Price: USD $3.91776
≥1 USD $3.91776
≥10 USD $3.28944

Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 2
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Base Part Number CSD19535
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7930pF @ 50V
Current - Continuous Drain (Id) @ 25°C 200A Ta
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 200A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0041Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 451 mJ

Dimensions

Height 4.83mm
Length 10.18mm
Width 8.41mm
Thickness 4.44mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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