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STP12NM50FP

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
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Inventory: 962
Minimum: 1
Total Price: USD $0.66
Unit Price: USD $0.655777
≥1 USD $0.655777
≥10 USD $0.636489
≥100 USD $0.617202
≥500 USD $0.593092

Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tube
Series MDmesh?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 350mOhm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 12A
Base Part Number STP12
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection ISOLATED
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 12A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 400 mJ
Max Junction Temperature (Tj) 150°C

Dimensions

Height 20mm
Length 10.4mm
Width 4.6mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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