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EPC2022

EPC
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description GAN TRANS 100V 3MOHM BUMPED DIE
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Inventory: 4067
Minimum: 1
Total Price: USD $8.29
Unit Price: USD $8.28828
≥1 USD $8.28828
≥10 USD $7.10094
≥100 USD $5.917666
≥500 USD $5.221487

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series eGaN?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 12mA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 50V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -4V
Continuous Drain Current (ID) 60A
Input Capacitance 1.5nF
Rds On Max 3.2 mΩ

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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