Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2001
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 23mOhm
Terminal Finish MATTE TIN OVER NICKEL
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating 94A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 580W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 580W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 56A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6040pF @ 25V
Current - Continuous Drain (Id) @ 25°C 94A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 160 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 79 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 94A
Threshold Voltage 5V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 90A
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Recovery Time 340 ns
Nominal Vgs 5 V