Operating Temperature 175°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 585mOhm
Technology SiCFET (Silicon Carbide)
Number of Elements 1
Power Dissipation-Max 85W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 585m Ω @ 3A, 18V
Vgs(th) (Max) @ Id 4V @ 900μA
Input Capacitance (Ciss) (Max) @ Vds 463pF @ 800V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 18V
Rise Time 17ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -6V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 22V
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 25A
Nominal Vgs 4 V