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IPW60R037P7XKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Single N-Channel 600V 37 mOhm 121 nC CoolMOS? Power Mosfet - TO-247-3
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Inventory: 1495
Minimum: 1
Total Price: USD $5.83
Unit Price: USD $5.832645
≥1 USD $5.832645
≥10 USD $5.502494
≥100 USD $5.191032
≥500 USD $4.8972
≥1000 USD $4.62

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Dimensions

Height 25.4mm

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series CoolMOS? P7
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 255W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 255W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 29.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1.48mA
Input Capacitance (Ciss) (Max) @ Vds 5243pF @ 400V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 121nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 76A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.037Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 295 mJ
Max Junction Temperature (Tj) 150°C

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON

Alternative Model

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