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IXFK360N15T2

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
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Inventory: 157
Minimum: 1
Total Price: USD $42.29
Unit Price: USD $42.28602
≥1 USD $42.28602
≥10 USD $34.696043
≥100 USD $33.61176
≥500 USD $32.527478
≥1000 USD $31.443195

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series GigaMOS?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Output Voltage 150V
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1670W Tc
Nominal Supply Current 100A
Operating Mode ENHANCEMENT MODE
Output Current 360A
Case Connection DRAIN
Turn On Delay Time 50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 47500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 360A Tc
Gate Charge (Qg) (Max) @ Vgs 715nC @ 10V
Rise Time 170 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 265 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) 360A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 900A
Number of Drivers 1

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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