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CSD19536KCS

Texas Instruments
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V TO-220
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Inventory: 2452
Minimum: 1
Total Price: USD $23.83
Unit Price: USD $23.829944
≥1 USD $23.829944
≥10 USD $22.481074
≥100 USD $21.208565
≥500 USD $20.008085
≥1000 USD $18.875555

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19536
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 150A Ta
Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
Rise Time 8 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 150A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 806 mJ

Dimensions

Height 4.7mm
Length 10.16mm
Width 8.7mm
Thickness 4.58mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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