Operating Temperature 175°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 117mOhm
Technology SiCFET (Silicon Carbide)
Number of Outputs 1
Max Output Current 2A
Number of Elements 1
Interface On/Off
Power Dissipation-Max 262W Tc
Element Configuration Single
Output Configuration High Side
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 117m Ω @ 10A, 18V
Vgs(th) (Max) @ Id 4V @ 4.4mA
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 800V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 106nC @ 18V
Rise Time 36ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -6V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 76 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 22V
Drain Current-Max (Abs) (ID) 40A
Pulsed Drain Current-Max (IDM) 80A
Nominal Vgs 4 V