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SI5902BDC-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 4A 1206-8
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Inventory: 10675
Minimum: 1
Total Price: USD $1.17
Unit Price: USD $1.17348
≥1 USD $1.17348
≥10 USD $0.957264
≥100 USD $0.744744
≥500 USD $0.63124
≥1000 USD $0.514215

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Supplier Device Package 1206-8 ChipFET?
Weight 84.99187mg

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 65mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.12W
Base Part Number SI5902
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Power Dissipation 1.5W
Turn On Delay Time 4 ns
Power - Max 3.12W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4A
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 3.7A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 220pF
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Drain to Source Resistance 53mOhm
Rds On Max 65 mΩ
Nominal Vgs 1.5 V

Dimensions

Height 1.1mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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