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SIZ300DT-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 30V 11A/28A 16.7/31W 24mohm/11mohm @ 10V
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Inventory: 133
Minimum: 1
Total Price: USD $1
Unit Price: USD $0.99792
≥1 USD $0.99792
≥10 USD $0.816816
≥100 USD $0.634973
≥500 USD $0.538211
≥1000 USD $0.438438

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 750μm
Length 3mm
Width 3mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Max Power Dissipation 31W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SIZ300
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Power - Max 16.7W 31W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 9.8A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A 28A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 80 ns
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 11A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 7 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

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