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ZXMC3A16DN8TA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 30V 8SOIC
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Inventory: 30043
Minimum: 1
Total Price: USD $1.29
Unit Price: USD $1.2936
≥1 USD $1.2936
≥10 USD $1.05798
≥100 USD $0.823099

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 48mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 2.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6.4A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 3 ns
Power - Max 1.25W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 796pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.9A 4.1A
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 10V
Rise Time 6.4 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 9.4 ns
Turn-Off Delay Time 21.6 ns
Continuous Drain Current (ID) 6.4A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.9A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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