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SI4202DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET DUAL N-CH 20V (D-S)
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Inventory: 5339
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.070852
≥1 USD $0.070852
≥10 USD $0.068769
≥100 USD $0.066685
≥500 USD $0.06408

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 506.605978mg

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 14MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.7W
Number of Elements 2
Number of Channels 2
Voltage 30V
Element Configuration Dual
Current 75A
Power Dissipation 2.4W
Power - Max 3.7W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 14mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12.1A
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 12.1A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 710pF
FET Feature Logic Level Gate
Drain to Source Resistance 17mOhm
Rds On Max 14 mΩ

Alternative Model

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