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SI5908DC-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 4.4A 1206-8
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Inventory: 27880
Minimum: 1
Total Price: USD $0.87
Unit Price: USD $0.86856
≥1 USD $0.86856
≥10 USD $0.708708
≥100 USD $0.551074
≥500 USD $0.467101
≥1000 USD $0.462

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Powers
Max Power Dissipation 1.1W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI5908
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Rise Time 36ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 4.4A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.04Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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