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ZXMN2A04DN8TA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET N-CH 20V 7.7A 8-Pin SOIC T/R
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Inventory: 710
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Total Price: USD $1.79
Unit Price: USD $1.79256
≥1 USD $1.79256
≥10 USD $1.488564
≥100 USD $1.18466

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 25mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Powers
Voltage - Rated DC 20V
Max Power Dissipation 2.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 7.9 ns
Power - Max 1.8W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 5.9A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 1880pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.9A
Gate Charge (Qg) (Max) @ Vgs 22.1nC @ 5V
Rise Time 14.8 ns
Fall Time (Typ) 30.6 ns
Turn-Off Delay Time 50.5 ns
Continuous Drain Current (ID) 7.7A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 5.9A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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