Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1997
Series CoolMOS?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 833W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 833W
Case Connection ISOLATED
Turn On Delay Time 21 ns
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 71.5A, 10V
Vgs(th) (Max) @ Id 3.9V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 28000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 1036nC @ 10V
Rise Time 30 ns
Drain to Source Voltage (Vdss) 600V
Fall Time (Typ) 84 ns
Turn-Off Delay Time 283 ns
Continuous Drain Current (ID) 143A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.018Ohm
Avalanche Energy Rating (Eas) 1800 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard