Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
Resistance 270mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Max Power Dissipation 1.25W
Terminal Form GULL WING
Current Rating -1.7A
Base Part Number IRF7504PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 9.1 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.7A
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V
Rise Time 35 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 43 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) -1.7A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 9.6A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate