Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Resistance 250mOhm
Additional Feature HIGH RELIABILITY
Voltage - Rated DC -30V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -2.3A
Base Part Number IRF9953PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 9.7 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 14 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 6.9 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 10A
Avalanche Energy Rating (Eas) 57 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard