Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 135mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC 20V
Max Power Dissipation 1.25W
Terminal Form GULL WING
Current Rating 2.4A
Base Part Number IRF7501PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 5.7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 135m Ω @ 1.7A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 24 ns
Fall Time (Typ) 16 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 2.4A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 19A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 700 mV