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ZXMC6A09DN8TA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 60V 8-SOIC
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Inventory: 388
Minimum: 1
Total Price: USD $1.85
Unit Price: USD $1.848
≥1 USD $1.848
≥10 USD $1.534764
≥100 USD $1.221805

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 55mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Max Power Dissipation 2.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 5.1A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 4.6 ns
Power - Max 1.8W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 1407pF @ 40V
Current - Continuous Drain (Id) @ 25°C 3.9A 3.7A
Gate Charge (Qg) (Max) @ Vgs 24.2nC @ 10V
Rise Time 5.8 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 23 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 5.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.9A
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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