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IRF7328TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 30V 8A 8-SOIC
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Inventory: 36
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Total Price: USD $0.1
Unit Price: USD $0.097422
≥1 USD $0.097422
≥10 USD $0.094557
≥100 USD $0.091691
≥500 USD $0.08811

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Dimensions

Height 1.75mm
Length 4.9784mm
Width 3.9878mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 21MOhm
Additional Feature ULTRA LOW RESISTANCE
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -8A
Base Part Number IRF7328PBF
Number of Elements 2
Row Spacing 6.3 mm
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 13 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2675pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 15 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 98 ns
Turn-Off Delay Time 198 ns
Continuous Drain Current (ID) -8A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 56 ns
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs -2.5 V

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Alternative Model

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