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SI7212DN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 4.9A 1212-8
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Inventory: 27111
Minimum: 1
Total Price: USD $0.37
Unit Price: USD $0.367829
≥1 USD $0.367829
≥10 USD $0.357011
≥100 USD $0.346192
≥500 USD $0.332669

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8 Dual
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1.3W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI7212
Pin Count 8
JESD-30 Code S-XDSO-C6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 4.9A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.036Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 5 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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