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2N7002DW-7-F

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 60V 0.23A SOT-363
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Inventory: 156007
Minimum: 1
Total Price: USD $0.08
Unit Price: USD $0.083286
≥1 USD $0.083286
≥500 USD $0.061236
≥1000 USD $0.05103
≥2000 USD $0.04682
≥5000 USD $0.043754

Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 7.5Ohm
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Max Power Dissipation 200mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 115mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 7 ns
Power - Max 310mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230mA
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 115mA
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.115A
Drain to Source Breakdown Voltage 70V
Dual Supply Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Nominal Vgs 2 V
Feedback Cap-Max (Crss) 5 pF

Dimensions

Height 1mm
Length 2.2mm
Width 1.35mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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