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BSM080D12P2C008

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package Module
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description SIC POWER MODULE-1200V-80A
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Technical Details

Supply Chain

Factory Lead Time 25 Weeks

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature 175°C TJ
Packaging Tray
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Max Power Dissipation 600W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X8
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 13.2mA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 80A
Pulsed Drain Current-Max (IDM) 160A
DS Breakdown Voltage-Min 1200V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Silicon Carbide (SiC)

Alternative Model

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