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CSD16301Q2

Texas Instruments
RoHS
RoHS RoHS compliant
Package 6-SMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description TEXAS INSTRUMENTS - CSD16301Q2 - Power MOSFET, N Channel, 25 V, 5 A, 0.019 ohm, SON, Surface Mount
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Inventory: 13282
Minimum: 1
Total Price: USD $0.45
Unit Price: USD $0.45276
≥1 USD $0.45276
≥10 USD $0.38808
≥100 USD $0.269716
≥500 USD $0.21058
≥1000 USD $0.171152

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD16301
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 2.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 4A, 8V
Vgs(th) (Max) @ Id 1.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Rise Time 4.4 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 1.7 ns
Turn-Off Delay Time 4.1 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.034Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 20A
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.2 V

Dimensions

Height 800μm
Length 2mm
Width 2mm
Thickness 750μm

Alternative Model

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