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SI5457DC-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 6A CHIPFET
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Inventory: 32078
Minimum: 1
Total Price: USD $7.26
Unit Price: USD $7.258808
≥1 USD $7.258808
≥10 USD $5.956073
≥100 USD $5.76954
≥500 USD $5.583008
≥1000 USD $5.397473

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 36mOhm
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Turn On Delay Time 25 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 4.9A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 20 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage -20V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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