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IRLL024ZTRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 5A SOT223
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Inventory: 170089
Minimum: 1
Total Price: USD $0.23
Unit Price: USD $0.230666
≥1 USD $0.230666
≥10 USD $0.69426
≥100 USD $0.672315
≥500 USD $0.651368
≥1000 USD $0.629423
≥3000 USD $0.564585

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 60MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 8.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Rise Time 33 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 40A

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.4478mm
Length 6.6802mm
Width 3.7mm

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