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FDT86244

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 150V 2.8A SOT-223
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Inventory: 991
Minimum: 1
Total Price: USD $0.18
Unit Price: USD $0.176864
≥1 USD $0.176864
≥10 USD $0.171662
≥100 USD $0.16646
≥500 USD $0.159958

Technical Details

Supply Chain

Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 12 hours ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 250.2mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Case Connection DRAIN
Turn On Delay Time 5.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 128m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 395pF @ 75V
Current - Continuous Drain (Id) @ 25°C 2.8A Tc
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time 1.3 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.4 ns
Turn-Off Delay Time 9.8 ns
Continuous Drain Current (ID) 2.8A
Threshold Voltage 3.1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Nominal Vgs 3.1 V
Feedback Cap-Max (Crss) 5 pF

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.7mm
Length 3.7mm
Width 6.7mm

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