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IRFHM9331TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 11A 8-PQFN
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Inventory: 18856
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.147753
≥1 USD $0.147753
≥10 USD $0.143407
≥100 USD $0.139061
≥500 USD $0.133629

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 14.6MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 11A, 20V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1543pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta 24A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 27 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V 20V
Vgs (Max) ±25V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) -11A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 24A
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 90A
Avalanche Energy Rating (Eas) 76 mJ
Max Junction Temperature (Tj) 150°C

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1mm
Length 2.9972mm
Width 2.9972mm

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